AOL1404 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOL1404
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 740 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: ULTRA-SO8
Búsqueda de reemplazo de AOL1404 MOSFET
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AOL1404 datasheet
aol1404.pdf
AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch
aol1404g.pdf
AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aol1401.pdf
AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON)
aol1408.pdf
AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON)
Otros transistores... AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 , IRFP260 , AOL1413 , AOL1414 , AOL1426 , AOL1428A , AOL1432 , AOL1432A , AOL1448 , AOL1454 .
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