All MOSFET. AOL1404 Datasheet

 

AOL1404 Datasheet and Replacement


   Type Designator: AOL1404
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: ULTRA-SO8
 

 AOL1404 substitution

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AOL1404 Datasheet (PDF)

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AOL1404

AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch

 0.1. Size:352K  aosemi
aol1404g.pdf pdf_icon

AOL1404

AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 8.1. Size:144K  aosemi
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AOL1404

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)

 8.2. Size:208K  aosemi
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AOL1404

AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)

Datasheet: AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 , 8205A , AOL1413 , AOL1414 , AOL1426 , AOL1428A , AOL1432 , AOL1432A , AOL1448 , AOL1454 .

History: DMP3020LSS | IRF7739L1 | PHB66NQ03LT

Keywords - AOL1404 MOSFET datasheet

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