AON1610 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON1610
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 96 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: DFN1.6X1.6A
Búsqueda de reemplazo de AON1610 MOSFET
Principales características: AON1610
aon1610.pdf
AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
aon1611.pdf
AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
aon1634.pdf
AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
aon1620.pdf
AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
Otros transistores... AOL1448 , AOL1454 , AOL1458 , AOL1482 , AOL1700 , AOL1712 , AON1605 , AON1606 , AON7506 , AON1611 , AON1620 , AON1634 , AON2240 , AON2260 , AON2290 , AON2400 , AON2401 .
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