AON1610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

AON160620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON1606 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7Aideal for load switch applications. RDS(ON) (at VGS =4.5V)

AON160520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON1605 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7Aideal for load switch applications. RDS(ON) (at VGS =-4.5V)