AON1610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON1610
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.8 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.1 V
Tiempo de elevación (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 96 pF
Resistencia drenaje-fuente RDS(on): 0.029 Ohm
Empaquetado / Estuche: DFN1.6x1.6A
Búsqueda de reemplazo de MOSFET AON1610
AON1610 Datasheet (PDF)
1.1. aon1610.pdf 
Size:231K _aosemi
AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 29mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 34mΩ RDS(ON) (at VGS =1.8V) < 44mΩ
4.1. aon1611.pdf Size:220K _aosemi
AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 58mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 76mΩ RDS(ON) (at VGS =-1.8V) < 9
5.1. aon1606.pdf Size:236K _aosemi
AON1606 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7A ideal for load switch applications. RDS(ON) (at VGS =4.5V) < 275mΩ RDS(ON) (at VGS =2.5V) < 335mΩ RDS(ON) (at VGS =1.8V) < 390mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6
5.2. aon1620.pdf Size:236K _aosemi
AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 22mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 27mΩ RDS(ON) (at VGS =1.8V) < 36mΩ
5.3. aon1634.pdf Size:217K _aosemi
AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V) < 54mΩ and battery protection applications. RDS(ON) (at VGS =4.5V) < 62mΩ RDS(ON) (at VGS =2.5V) < 82mΩ
5.4. aon1605.pdf Size:264K _aosemi
AON1605 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7A ideal for load switch applications. RDS(ON) (at VGS =-4.5V) < 710mΩ RDS(ON) (at VGS =-2.5V) < 930mΩ RDS(ON) (at VGS =-1.8V) < 1250mΩ Typical ESD protection HBM Class 1C DFN 1
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
