AON1610 Specs and Replacement
Type Designator: AON1610
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: DFN1.6X1.6A
AON1610 substitution
- MOSFET ⓘ Cross-Reference Search
AON1610 datasheet
aon1610.pdf
AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) ... See More ⇒
aon1611.pdf
AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) ... See More ⇒
aon1634.pdf
AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V) ... See More ⇒
aon1620.pdf
AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) ... See More ⇒
Detailed specifications: AOL1448, AOL1454, AOL1458, AOL1482, AOL1700, AOL1712, AON1605, AON1606, AON7506, AON1611, AON1620, AON1634, AON2240, AON2260, AON2290, AON2400, AON2401
Keywords - AON1610 MOSFET specs
AON1610 cross reference
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AON1610 replacement
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