AON1610
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON1610
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 96
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029
Ohm
Package: DFN1.6X1.6A
AON1610
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON1610
Datasheet (PDF)
..1. Size:231K aosemi
aon1610.pdf 
AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
8.1. Size:220K aosemi
aon1611.pdf
AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
9.1. Size:217K aosemi
aon1634.pdf
AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
9.2. Size:236K aosemi
aon1620.pdf
AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
9.3. Size:236K aosemi
aon1606.pdf
AON160620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON1606 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7Aideal for load switch applications. RDS(ON) (at VGS =4.5V)
9.4. Size:264K aosemi
aon1605.pdf
AON160520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON1605 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7Aideal for load switch applications. RDS(ON) (at VGS =-4.5V)
Datasheet: IRFP360LC
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