HAF2011 Todos los transistores

 

HAF2011 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAF2011
   Tipo de FET: FET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: LDPAK
 

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HAF2011 Datasheet (PDF)

 0.1. Size:129K  renesas
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HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:229K  renesas
haf2012l haf2012s.pdf pdf_icon

HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:106K  renesas
haf2007l haf2007s.pdf pdf_icon

HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:1501K  cn vbsemi
haf2007-90s.pdf pdf_icon

HAF2011

HAF2007-90Swww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo

Otros transistores... HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 , HAF2005 , HAF2007 , HAF2008 , AON7403 , HAF2012 , HAT1031T , HAT1033T , HAT1036R , HAT1040T , HAT1041T , HAT1043M , HAT1044M .

History: BF998WR | FDD13AN06A0 | FCH110N65F

 

 
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