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HAF2011 Spec and Replacement


   Type Designator: HAF2011
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: LDPAK

 HAF2011 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HAF2011 Specs

 0.1. Size:129K  renesas
 haf2011l haf2011s.pdf pdf_icon

HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:229K  renesas
 haf2012l haf2012s.pdf pdf_icon

HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:106K  renesas
 haf2007l haf2007s.pdf pdf_icon

HAF2011

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:1501K  cn vbsemi
 haf2007-90s.pdf pdf_icon

HAF2011

HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo... See More ⇒

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Detailed specifications: HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 , HAF2005 , HAF2007 , HAF2008 , IRF9640 , HAF2012 , HAT1031T , HAT1033T , HAT1036R , HAT1040T , HAT1041T , HAT1043M , HAT1044M .

History: HGB059N12S | PMPB43XPEA

Keywords - HAF2011 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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