AON2810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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AON2810 Datasheet (PDF)

1.1. aon2810.pdf Size:250K _aosemi

AON2810 30V Dual N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A • Low Gate Charge RDS(ON) (at VGS=10V) < 44 mΩ • ESD protection RDS(ON) (at VGS=4.5V) < 52 mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=2.5V) < 74 mΩ Typical ESD protectio

4.1. aon2812.pdf Size:243K _aosemi

AON2812 30V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 4.5A • Low Gate Charge RDS(ON) (at VGS=10V) < 37mΩ • ESD protection RDS(ON) (at VGS=4.5V) < 45mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=2.5V) < 70mΩ Typical ESD protection HBM Class 3A Applicatio

 5.1. aon2803.pdf Size:236K _aosemi

AON2803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8A with gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V) < 70mΩ for use as a load switch or in PWM applications. RDS(ON) (at VGS =-2.5V) < 90mΩ RD

5.2. aon2801.pdf Size:171K _aosemi

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 120mΩ (VGS = -4.5V) device is suitable for use as a load switch or in PWM RDS(ON) < 160mΩ (VGS =

 5.3. aon2880.pdf Size:232K _aosemi

AON2880 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2880 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 7A extremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V) < 21.5mΩ MOSFETs arranged in a common-drain configuration to RDS(ON) (at VGS = 2.5V) < 30.0mΩ facilitate bi-direc

5.4. aon2809.pdf Size:230K _aosemi

AON2809 12V Dual P-Channel MOSFET General Description Product Summary VDS The AON2809 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) < 68mΩ and battery protection applications. RDS(ON) (at VGS=-2.5V) < 90mΩ RDS(ON) (at VGS=-1.8V) <

 5.5. aon2800.pdf Size:262K _aosemi

AON2800 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 4.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 47mΩ and battery protection applications. RDS(ON) (at VGS=2.5V) < 65mΩ ESD Protected DFN 2x2 Pack

5.6. aon2802.pdf Size:218K _aosemi

AON2802 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 60mΩ and battery protection applications. RDS(ON) (at VGS=4.5V) < 68mΩ RDS(ON) (at VGS=2.5V) < 88mΩ

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |