AON2810 Datasheet and Replacement
Type Designator: AON2810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: DFN2X2
AON2810 substitution
AON2810 Datasheet (PDF)
aon2810.pdf

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)
aon2812.pdf

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)
aon2800.pdf

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
aon2880.pdf

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)
Datasheet: AON2701 , AON2705 , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , IRF730 , AON2812 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , AON3816 .
History: P1086 | DMN2058U | AP2323GN | SSF3624 | INJ0011AM1 | ZXMS6006DGQ | RFP50N05L
Keywords - AON2810 MOSFET datasheet
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History: P1086 | DMN2058U | AP2323GN | SSF3624 | INJ0011AM1 | ZXMS6006DGQ | RFP50N05L



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