All MOSFET. AON2810 Datasheet

 

AON2810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON2810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: DFN2X2

 AON2810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON2810 Datasheet (PDF)

 ..1. Size:250K  aosemi
 aon2810.pdf

AON2810 AON2810

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:243K  aosemi
 aon2812.pdf

AON2810 AON2810

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:262K  aosemi
 aon2800.pdf

AON2810 AON2810

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
 aon2880.pdf

AON2810 AON2810

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

 9.3. Size:171K  aosemi
 aon2801.pdf

AON2810 AON2810

AON2801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON2801/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 9.4. Size:230K  aosemi
 aon2809.pdf

AON2810 AON2810

AON280912V Dual P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2809 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.5. Size:236K  aosemi
 aon2803.pdf

AON2810 AON2810

AON280320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2803 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8Awith gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)

 9.6. Size:218K  aosemi
 aon2802.pdf

AON2810 AON2810

AON280230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON2802 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHP10N60E

 

 
Back to Top