All MOSFET. AON2810 Datasheet

 

AON2810 Datasheet and Replacement


   Type Designator: AON2810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: DFN2X2
 

 AON2810 substitution

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AON2810 Datasheet (PDF)

 ..1. Size:250K  aosemi
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AON2810

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:243K  aosemi
aon2812.pdf pdf_icon

AON2810

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:262K  aosemi
aon2800.pdf pdf_icon

AON2810

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
aon2880.pdf pdf_icon

AON2810

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

Datasheet: AON2701 , AON2705 , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , IRF730 , AON2812 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , AON3816 .

History: AP2851GO | ELM34604AA | 7N80G-TF2-T | 2SK2615 | OSG60R1K2AF | RJK1053DPB | 2SK1771

Keywords - AON2810 MOSFET datasheet

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