AON3402 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON3402
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.2 nS
Cossⓘ - Capacitancia de salida: 232 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: DFN3X3
Búsqueda de reemplazo de AON3402 MOSFET
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AON3402 datasheet
aon3402.pdf
AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 12.6A (VGS = 4.5V) operation with gate voltages as low as 1.8V while RDS(ON)
aon3406.pdf
AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)
aon3408.pdf
AON3408 30V N-Channel MOSFET General Description Product Summary Features The AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30V DS provide excellent RDS(ON) and low gate charge. This IDD 9.2A (VGS 10V) I ==11A (VGS ==10V) device is suitable for use as a load switch or in PWM RDS(ON)
aon3414.pdf
AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)
Otros transistores... AON2707, AON2800, AON2801, AON2802, AON2803, AON2809, AON2810, AON2812, IRF1405, AON3419, AON3611, AON3613, AON3806, AON3814, AON3816, AON3818, AON4420L
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