AON3818 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON3818
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 800 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de AON3818 MOSFET
AON3818 Datasheet (PDF)
aon3818.pdf
AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)
aon3814.pdf
AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3816.pdf
AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3814.pdf
AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
Otros transistores... AON2812 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , AON3816 , IRF520 , AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , AON4805L , AON4807 , AON5802B .
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