AON3818 Datasheet and Replacement
Type Designator: AON3818
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 800 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: DFN3X3
AON3818 substitution
AON3818 Datasheet (PDF)
aon3818.pdf

AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)
aon3814.pdf

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3816.pdf

AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3814.pdf

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
Datasheet: AON2812 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , AON3816 , 8N60 , AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , AON4805L , AON4807 , AON5802B .
History: APT3580BN | RSR030N06
Keywords - AON3818 MOSFET datasheet
AON3818 cross reference
AON3818 equivalent finder
AON3818 lookup
AON3818 substitution
AON3818 replacement
History: APT3580BN | RSR030N06



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