AON4421 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON4421
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 Vtrⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: DFN2X3
Búsqueda de reemplazo de MOSFET AON4421
AON4421 Datasheet (PDF)
aon4421.pdf
AON4421P-Channel Enhancement Mode Field Effect Transistor General Description Product SummaryVDS -30VThe AON4421 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch. RDS(ON) (at VGS=-10V)
aon4420.pdf
AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)
aon4420l.pdf
AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)
aon4413.pdf
AON4413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4413 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)
aon4407.pdf
AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
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