Справочник MOSFET. AON4421

 

AON4421 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON4421
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: DFN2X3

 Аналог (замена) для AON4421

 

 

AON4421 Datasheet (PDF)

 ..1. Size:299K  aosemi
 aon4421.pdf

AON4421 AON4421

AON4421P-Channel Enhancement Mode Field Effect Transistor General Description Product SummaryVDS -30VThe AON4421 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

 8.1. Size:148K  aosemi
 aon4420.pdf

AON4421 AON4421

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 8.2. Size:147K  aosemi
 aon4420l.pdf

AON4421 AON4421

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 9.1. Size:137K  aosemi
 aon4413.pdf

AON4421 AON4421

AON4413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4413 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

 9.2. Size:481K  aosemi
 aon4407.pdf

AON4421 AON4421

AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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