AON6230 Todos los transistores

 

AON6230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6230
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 1640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00144 Ohm
   Paquete / Cubierta: DFN5X6
 

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AON6230 Datasheet (PDF)

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AON6230

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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AON6230

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

 8.2. Size:637K  1
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AON6230

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.3. Size:237K  aosemi
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AON6230

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

Otros transistores... AON4805L , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 , AON6210 , IRF740 , AON6232 , AON6234 , AON6236 , AON6240 , AON6242 , AON6244 , AON6246 , AON6248 .

History: AOI2606 | IRFS723 | HGB014N08A | ME70N03S-G | DH400P06F | IXFT86N30T | IPB180N08S4-02

 

 
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