AON6230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6230
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 1640 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00144 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6230 MOSFET
AON6230 Datasheet (PDF)
aon6230.pdf

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6234.pdf

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
aon6236.pdf

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6232a.pdf

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON4805L , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 , AON6210 , IRF740 , AON6232 , AON6234 , AON6236 , AON6240 , AON6242 , AON6244 , AON6246 , AON6248 .
History: MPG08N68P | MPG120N06P | VS3628DE-G | 2SK627 | TPCJ1012 | AO4472
History: MPG08N68P | MPG120N06P | VS3628DE-G | 2SK627 | TPCJ1012 | AO4472



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