AON6230 MOSFET Datasheet: N-Ch, 40V, 85A. Full specification with pinout and replacement list

AON6230 Specs and Replacement

Type Designator: AON6230

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 1640 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00144 Ohm

Package: DFN5X6

AON6230 substitution

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AON6230 datasheet

..1. Size:248K aosemi
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AON6230 40V N-Channel MOSFET General Description Product Summary VDS The AON6230 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are ... See More ⇒

8.2. Size:637K 1
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AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

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AON6232A 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒