AON6242 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6242

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 540 pF

Resistencia drenaje-fuente RDS(on): 0.0036 Ohm

Empaquetado / Estuche: DFN5x6

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AON6242 Datasheet (PDF)

1.1. aon6242.pdf Size:287K _aosemi

AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.5mΩ RDS(ON) and Crss.In add

4.1. aon6244.pdf Size:298K _aosemi

AON6244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS =10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS =10V) < 4.7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS =4.5V) < 6.2mΩ RDS(ON) and Crss.In ad

4.2. aon6246.pdf Size:287K _aosemi

AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6.4mΩ minimized due to an extremely low combination of RDS(ON) RDS(ON) (at VGS = 4.5V) < 8mΩ and Crss.In addi

4.3. aon6240.pdf Size:321K _aosemi

AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 1.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 2.4mΩ RDS(ON) and Crss.In ad

4.4. aon6248.pdf Size:265K _aosemi

AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 11.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 14.7mΩ extremely low combin

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