AON6242
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6242
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 540
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
DFN5X6
AON6242
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6242
Datasheet (PDF)
..1. Size:287K aosemi
aon6242.pdf 
AON624260V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AON6242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.1. Size:321K 1
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.2. Size:287K aosemi
aon6246.pdf
AON624660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6246 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 80Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.3. Size:265K aosemi
aon6248.pdf
AON624860V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6248 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 53Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.4. Size:298K aosemi
aon6244.pdf
AON624460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO6244 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS =10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS =10V)
8.5. Size:321K aosemi
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.6. Size:1038K cn vbsemi
aon6246.pdf
AON6246www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
