AON6248 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6248
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 69.5 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 53 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.5 V
Tiempo de elevación (tr): 2.5 nS
Conductancia de drenaje-sustrato (Cd): 165 pF
Resistencia drenaje-fuente RDS(on): 0.0115 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6248
AON6248 Datasheet (PDF)
1.1. aon6248.pdf 
Size:265K _aosemi
AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 11.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 14.7mΩ extremely low combin
4.1. aon6244.pdf Size:298K _aosemi
AON6244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS =10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS =10V) < 4.7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS =4.5V) < 6.2mΩ RDS(ON) and Crss.In ad
4.2. aon6242.pdf Size:287K _aosemi
AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.5mΩ RDS(ON) and Crss.In add
4.3. aon6246.pdf Size:287K _aosemi
AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6.4mΩ minimized due to an extremely low combination of RDS(ON) RDS(ON) (at VGS = 4.5V) < 8mΩ and Crss.In addi
4.4. aon6240.pdf Size:321K _aosemi
AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 1.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 2.4mΩ RDS(ON) and Crss.In ad
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