AON6248 MOSFET Datasheet: N-Ch, 60V, 53A. Full specification with pinout and replacement list

AON6248 Specs and Replacement

Type Designator: AON6248

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFN5X6

AON6248 substitution

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AON6248 datasheet

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AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

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AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:287K aosemi
aon6242.pdf pdf_icon

AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒