AON6266 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON6266
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET AON6266

AON6266 Datasheet (PDF)

..1. Size:368K aosemi
aon6266.pdf

AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

0.1. Size:565K aosemi
aon6266e.pdf

AON6266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

8.1. Size:334K 1
aon6262e.pdf

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.2. Size:334K aosemi
aon6262e.pdf

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.3. Size:347K aosemi
aon6264e.pdf

AON6264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.4. Size:567K aosemi
aon6264c.pdf

AON6264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

8.5. Size:262K aosemi
aon6260.pdf

AON626060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6260 uses trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

8.6. Size:331K aosemi
aon6268.pdf

AON6268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: