AON6270 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6270
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 615 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6270 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6270 datasheet
aon6270.pdf
AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6278.pdf
AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6276.pdf
AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
aon6278.pdf
AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
Otros transistores... AON6240 , AON6242 , AON6244 , AON6246 , AON6248 , AON6250 , AON6260 , AON6266 , IRF640N , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 , AON6292 , AON6294 , AON6298 .
History: SI1433DH
History: SI1433DH
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