All MOSFET. AON6270 Datasheet

 

AON6270 Datasheet and Replacement


   Type Designator: AON6270
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: DFN5X6
 

 AON6270 substitution

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AON6270 Datasheet (PDF)

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AON6270

AON627075V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AON6270 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.1. Size:318K  1
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AON6270

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:303K  aosemi
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AON6270

AON6276TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:318K  aosemi
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AON6270

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ZXMN6A08G | ZXMP2120FFTA | AON2800 | ZXMN3A02N8TA | ZXMN10A25G | ZXMN10A25KTC | ZXMN3B04N8

Keywords - AON6270 MOSFET datasheet

 AON6270 cross reference
 AON6270 equivalent finder
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