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AON6280 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6280
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 592 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
   Paquete / Cubierta: DFN5X6
 

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AON6280 Datasheet (PDF)

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AON6280

AON628080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AON6280 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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AON6280

AON628280V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6282 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:271K  aosemi
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AON6280

AON628480V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6284 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 78Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:432K  aosemi
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AON6280

AON6284ATM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

Otros transistores... AON6244 , AON6246 , AON6248 , AON6250 , AON6260 , AON6266 , AON6270 , AON6278 , IRF3710 , AON6282 , AON6284 , AON6290 , AON6292 , AON6294 , AON6298 , AON6400 , AON6403 .

History: S80N10RN | IXTH12N120

 

 
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