AON6280
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6280
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 592
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041
Ohm
Package:
DFN5X6
AON6280
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6280
Datasheet (PDF)
..1. Size:295K aosemi
aon6280.pdf
AON628080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AON6280 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.1. Size:270K aosemi
aon6282.pdf
AON628280V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6282 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.2. Size:271K aosemi
aon6284.pdf
AON628480V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6284 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 78Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.3. Size:432K aosemi
aon6284a.pdf
AON6284ATM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
Datasheet: AON6244
, AON6246
, AON6248
, AON6250
, AON6260
, AON6266
, AON6270
, AON6278
, AON6414A
, AON6282
, AON6284
, AON6290
, AON6292
, AON6294
, AON6298
, AON6400
, AON6403
.