AON6294 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6294
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 195 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6294 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6294 datasheet
aon6294.pdf
AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
aon6298.pdf
AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6292.pdf
AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6290.pdf
AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
Otros transistores... AON6266 , AON6270 , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 , AON6292 , IRFB4115 , AON6298 , AON6400 , AON6403 , AON6404 , AON6404A , AON6405 , AON6407 , AON6411 .
History: QM1830M3
History: QM1830M3
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