All MOSFET. AON6294 Datasheet

 

AON6294 Datasheet and Replacement


   Type Designator: AON6294
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6
 

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AON6294 Datasheet (PDF)

 ..1. Size:260K  aosemi
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AON6294

AON6294100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:265K  1
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AON6294

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:263K  aosemi
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AON6294

AON6292100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6292 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:364K  aosemi
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AON6294

AON6290100V N-Channel MOSFETGeneral Description Product SummaryVDS 100VThe AON6290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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Datasheet: AON6266 , AON6270 , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 , AON6292 , IRFP250N , AON6298 , AON6400 , AON6403 , AON6404 , AON6404A , AON6405 , AON6407 , AON6411 .

History: OSG65R069HF | FDS7066N7 | AOD4184 | IPD088N04LG | IXTH86N25T | OSG65R2KPF | FIR16N06DG

Keywords - AON6294 MOSFET datasheet

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