AON6405 Todos los transistores

 

AON6405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6405

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.6 V

Carga de compuerta (Qg): 41 nC

Tiempo de elevación (tr): 260 nS

Conductancia de drenaje-sustrato (Cd): 755 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: DFN5x6

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AON6405 Datasheet (PDF)

1.1. aon6405.pdf Size:245K _aosemi

AON6405
AON6405

AON6405 30V P-Channel MOSFET General Description Product Summary VDS The AON6405 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 7mΩ and battery protection applications. RDS(ON) (at VGS = -4.5V) < 8mΩ ESD Protected 100% UIS Tested

4.1. aon6400.pdf Size:226K _aosemi

AON6405
AON6405

AON6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 1.4mΩ and battery protection applications. RDS(ON) (at VGS = 4.5V) < 1.8mΩ 100% UIS Tested 100% Rg Tested

4.2. aon6408.pdf Size:151K _aosemi

AON6405
AON6405

AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 25A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON) < 6.5mΩ (VGS = 10V) applications. RDS(ON) < 9.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Top View Bot

 4.3. aon6406.pdf Size:245K _aosemi

AON6405
AON6405

AON6406 30V N-Channel MOSFET General Description Product Summary VDS 30V • Latest Trench Power LV technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant ESD protected Application 100% UIS Tested • DC/DC Converters in C

4.4. aon6404.pdf Size:159K _aosemi

AON6405
AON6405

AON6404 30V N-Channel MOSFET General Description Product Summary The AON6404 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 85A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) < 2.2mΩ (VGS = 10V) switch and battery protection applications. RDS(ON) < 3.8mΩ (VGS = 4.5V) ESD protected 100% UIS Tested

 4.5. aon6404a.pdf Size:189K _aosemi

AON6405
AON6405

AON6404A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 2.3mΩ and battery protection applications. RDS(ON) (at VGS=4.5V) < 3.0mΩ ESD protected 100% UIS Tested

4.6. aon6403.pdf Size:231K _aosemi

AON6405
AON6405

AON6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 3.1mΩ and battery protection applications. RDS(ON) (at VGS = -4.5V) < 4.3mΩ 100% UIS Tested 100% Rg

4.7. aon6407.pdf Size:262K _aosemi

AON6405
AON6405

AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 4.5mΩ and battery protection applications. RDS(ON) (at VGS = -6V) < 6.0mΩ 100% UIS Tested 100% Rg Tes

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 
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