AON6405 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON6405
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 260 ns
Cossⓘ - Выходная емкость: 755 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: DFN5X6
AON6405 Datasheet (PDF)
aon6405.pdf
AON640530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6405 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6405.pdf
AON6405www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6404.pdf
AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6403.pdf
AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6400.pdf
AON640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6404a.pdf
AON6404A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6404A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6406.pdf
AON6406 30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)
aon6408.pdf
AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918