AON6424 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6424
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 41 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: DFN5X6
- Selección de transistores por parámetros
AON6424 Datasheet (PDF)
aon6424.pdf

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6428.pdf

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6422.pdf

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTB6410AN | SDF1NA60



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