AON6424 Datasheet and Replacement
Type Designator: AON6424
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DFN5X6
AON6424 substitution
AON6424 Datasheet (PDF)
aon6424.pdf

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6428.pdf

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6422.pdf

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
Datasheet: AON6404 , AON6404A , AON6405 , AON6407 , AON6411 , AON6413 , AON6414A , AON6416 , IRF1010E , AON6426 , AON6428 , AON6435 , AON6440 , AON6442 , AON6444 , AON6448 , AON6450 .
History: TPC8112 | PJC138K | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
Keywords - AON6424 MOSFET datasheet
AON6424 cross reference
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History: TPC8112 | PJC138K | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT



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