AON6435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6435
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET AON6435
AON6435 Datasheet (PDF)
aon6435.pdf
AON643530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON6435 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6450.pdf
AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6414al.pdf
AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6411.pdf
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6458.pdf
AON6458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AON6458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 14Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
aon6450.pdf
AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6482.pdf
AON6482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 28Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aon6424.pdf
AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf
AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6428.pdf
AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6442.pdf
AON644240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6442 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 32Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6414al.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6440.pdf
AON644040V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 40VThe AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6452.pdf
AON6452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6414a.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6410.pdf
AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)
aon6404.pdf
AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6403.pdf
AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6484.pdf
AON6484100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6484 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 12Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aon6448.pdf
AON644880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6400.pdf
AON640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6454a.pdf
AON6454A150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 31Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aon6486.pdf
AON6486100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6486 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aon6414.pdf
AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6416.pdf
AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6444.pdf
AON644460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 60VThe AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6418.pdf
AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6404a.pdf
AON6404A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6404A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6406.pdf
AON6406 30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)
aon6454.pdf
AON6454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aon6411.pdf
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6422.pdf
AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6405.pdf
AON640530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6405 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6408.pdf
AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
aon6413.pdf
AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)
aon6405.pdf
AON6405www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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