AON6435 Specs and Replacement
Type Designator: AON6435
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ -
Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN5X6
- MOSFET ⓘ Cross-Reference Search
AON6435 datasheet
..1. Size:267K aosemi
aon6435.pdf 
AON6435 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.1. Size:643K 1
aon6450.pdf
AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:265K 1
aon6414al.pdf
AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and ... See More ⇒
9.3. Size:268K 1
aon6407.pdf
AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.4. Size:262K 1
aon6411.pdf
AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.5. Size:562K aosemi
aon6458.pdf
AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:274K aosemi
aon6450.pdf
AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:245K aosemi
aon6482.pdf
AON6482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:390K aosemi
aon6424.pdf
AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:149K aosemi
aon6426.pdf
AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) ... See More ⇒
9.10. Size:301K aosemi
aon6428.pdf
AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.11. Size:305K aosemi
aon6442.pdf
AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒
9.12. Size:384K aosemi
aon6414al.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.14. Size:399K aosemi
aon6452.pdf
AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.15. Size:268K aosemi
aon6414a.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.16. Size:158K aosemi
aon6410.pdf
AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 24A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON) ... See More ⇒
9.17. Size:159K aosemi
aon6404.pdf
AON6404 30V N-Channel MOSFET General Description Product Summary The AON6404 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 85A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) ... See More ⇒
9.18. Size:231K aosemi
aon6403.pdf
AON6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.19. Size:358K aosemi
aon6484.pdf
AON6484 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6484 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 12A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.20. Size:273K aosemi
aon6448.pdf
AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.21. Size:226K aosemi
aon6400.pdf
AON6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.22. Size:251K aosemi
aon6454a.pdf
AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.23. Size:243K aosemi
aon6486.pdf
AON6486 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.24. Size:156K aosemi
aon6414.pdf
AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.25. Size:268K aosemi
aon6416.pdf
AON6416 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.26. Size:264K aosemi
aon6444.pdf
AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒
9.27. Size:262K aosemi
aon6407.pdf
AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.28. Size:306K aosemi
aon6418.pdf
AON6418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.29. Size:189K aosemi
aon6404a.pdf
AON6404A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.30. Size:245K aosemi
aon6406.pdf
AON6406 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.31. Size:239K aosemi
aon6454.pdf
AON6454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.32. Size:262K aosemi
aon6411.pdf
AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.33. Size:155K aosemi
aon6422.pdf
AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) ... See More ⇒
9.34. Size:245K aosemi
aon6405.pdf
AON6405 30V P-Channel MOSFET General Description Product Summary VDS The AON6405 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒
9.35. Size:151K aosemi
aon6408.pdf
AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 25A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON) ... See More ⇒
9.36. Size:278K aosemi
aon6413.pdf
AON6413 30V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
9.37. Size:874K cn vbsemi
aon6405.pdf
AON6405 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switch VDS (V) RDS(on) ( ) Max. applications ID a Qg (Typ.) Extremely low RDS(on) 0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET - 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested 0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf... See More ⇒
Detailed specifications: AON6407, AON6411, AON6413, AON6414A, AON6416, AON6424, AON6426, AON6428, AO3401, AON6440, AON6442, AON6444, AON6448, AON6450, AON6452, AON6454A, AON6458
Keywords - AON6435 MOSFET specs
AON6435 cross reference
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