AON6448 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6448  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm

Encapsulados: DFN5X6

  📄📄 Copiar 

 Búsqueda de reemplazo de AON6448 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AON6448 datasheet

 ..1. Size:273K  aosemi
 aon6448.pdf pdf_icon

AON6448

AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.1. Size:305K  aosemi
 aon6442.pdf pdf_icon

AON6448

AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.2. Size:262K  aosemi
 aon6440.pdf pdf_icon

AON6448

 8.3. Size:264K  aosemi
 aon6444.pdf pdf_icon

AON6448

AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6416, AON6424, AON6426, AON6428, AON6435, AON6440, AON6442, AON6444, IRFP260, AON6450, AON6452, AON6454A, AON6458, AON6482, AON6484, AON6486, AON6500