AON6448 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6448
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 83 W
Tensión drenaje-fuente (Vds): 80 V
Tensión compuerta-fuente (Vgs): 25 V
Corriente continua de drenaje (Id): 65 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3.7 V
Carga de compuerta (Qg): 44 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia drenaje-fuente RDS(on): 0.0096 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6448
AON6448 Datasheet (PDF)
1.1. aon6448.pdf 
Size:273K _aosemi
AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 9.6mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 12mΩ
4.1. aon6444.pdf Size:264K _aosemi
AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 6.5mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 8mΩ
4.2. aon6440.pdf Size:262K _aosemi
AON6440 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 40V The AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 3.4mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 4.5m
4.3. aon6442.pdf Size:305K _aosemi
AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.8mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 7mΩ RDS(ON) and Crss. In add
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
