AON6448 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6448

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 65 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.7 V

Carga de compuerta (Qg): 44 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 340 pF

Resistencia drenaje-fuente RDS(on): 0.0096 Ohm

Empaquetado / Estuche: DFN5x6

Búsqueda de reemplazo de MOSFET AON6448

AON6448 Datasheet (PDF)

1.1. aon6448.pdf Size:273K _aosemi

AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 9.6mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 12mΩ

4.1. aon6440.pdf Size:262K _aosemi

AON6440 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 40V The AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 3.4mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 4.5m�

4.2. aon6442.pdf Size:305K _aosemi

AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.8mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 7mΩ RDS(ON) and Crss. In add

4.3. aon6444.pdf Size:264K _aosemi

AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 6.5mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 8mΩ

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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