AON6486 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON6486 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6486

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: DFN5X6

Búsqueda de reemplazo de AON6486 MOSFET

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AON6486 datasheet

..1. Size:243K aosemi
aon6486.pdf pdf_icon

AON6486 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

8.1. Size:245K aosemi
aon6482.pdf pdf_icon

AON6482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

8.2. Size:358K aosemi
aon6484.pdf pdf_icon

AON6484 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6484 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 12A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.1. Size:643K 1
aon6450.pdf pdf_icon

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.2. Size:265K 1
aon6414al.pdf pdf_icon

AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and

9.3. Size:268K 1
aon6407.pdf pdf_icon

AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

9.4. Size:262K 1
aon6411.pdf pdf_icon

AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

9.5. Size:562K aosemi
aon6458.pdf pdf_icon

AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

9.6. Size:274K aosemi
aon6450.pdf pdf_icon

9.7. Size:390K aosemi
aon6424.pdf pdf_icon

AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

9.8. Size:149K aosemi
aon6426.pdf pdf_icon

AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)

9.9. Size:301K aosemi
aon6428.pdf pdf_icon

AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

9.10. Size:305K aosemi
aon6442.pdf pdf_icon

AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.11. Size:384K aosemi
aon6414al.pdf pdf_icon

AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

9.12. Size:262K aosemi
aon6440.pdf pdf_icon

9.13. Size:399K aosemi
aon6452.pdf pdf_icon

AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.14. Size:268K aosemi
aon6414a.pdf pdf_icon

AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

9.15. Size:158K aosemi
aon6410.pdf pdf_icon

AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 24A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)

9.16. Size:267K aosemi
aon6435.pdf pdf_icon

AON6435 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

9.17. Size:159K aosemi
aon6404.pdf pdf_icon

AON6404 30V N-Channel MOSFET General Description Product Summary The AON6404 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 85A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)

9.18. Size:231K aosemi
aon6403.pdf pdf_icon

AON6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

9.19. Size:273K aosemi
aon6448.pdf pdf_icon

AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.20. Size:226K aosemi
aon6400.pdf pdf_icon

AON6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.21. Size:251K aosemi
aon6454a.pdf pdf_icon

AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.22. Size:156K aosemi
aon6414.pdf pdf_icon

AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.23. Size:268K aosemi
aon6416.pdf pdf_icon

AON6416 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.24. Size:264K aosemi
aon6444.pdf pdf_icon

AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.25. Size:262K aosemi
aon6407.pdf pdf_icon

9.26. Size:306K aosemi
aon6418.pdf pdf_icon

AON6418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

9.27. Size:189K aosemi
aon6404a.pdf pdf_icon

AON6404A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.28. Size:245K aosemi
aon6406.pdf pdf_icon

AON6406 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)

9.29. Size:239K aosemi
aon6454.pdf pdf_icon

AON6454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.30. Size:262K aosemi
aon6411.pdf pdf_icon

9.31. Size:155K aosemi
aon6422.pdf pdf_icon

AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)

9.32. Size:245K aosemi
aon6405.pdf pdf_icon

AON6405 30V P-Channel MOSFET General Description Product Summary VDS The AON6405 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

9.33. Size:151K aosemi
aon6408.pdf pdf_icon

AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 25A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON)

9.34. Size:278K aosemi
aon6413.pdf pdf_icon

AON6413 30V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)

9.35. Size:874K cn vbsemi
aon6405.pdf pdf_icon

AON6405 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switch VDS (V) RDS(on) ( ) Max. applications ID a Qg (Typ.) Extremely low RDS(on) 0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET - 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested 0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf

Otros transistores... AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 , AON6484 , IRF1010E , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , AON6512 , AON6516 .