All MOSFET. AON6486 Datasheet

 

AON6486 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6486
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 3 nS
   Drain-Source Capacitance (Cd): 27 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
   Package: DFN5X6

 AON6486 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6486 Datasheet (PDF)

 ..1. Size:243K  aosemi
aon6486.pdf

AON6486
AON6486

AON6486100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6486 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 8.1. Size:245K  aosemi
aon6482.pdf

AON6486
AON6486

AON6482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 28Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 8.2. Size:358K  aosemi
aon6484.pdf

AON6486
AON6486

AON6484100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6484 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 12Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.1. Size:643K  1
aon6450.pdf

AON6486
AON6486

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.2. Size:265K  1
aon6414al.pdf

AON6486
AON6486

AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and

 9.3. Size:268K  1
aon6407.pdf

AON6486
AON6486

AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.4. Size:262K  1
aon6411.pdf

AON6486
AON6486

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.5. Size:562K  aosemi
aon6458.pdf

AON6486
AON6486

AON6458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AON6458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 14Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 9.6. Size:274K  aosemi
aon6450.pdf

AON6486
AON6486

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.7. Size:390K  aosemi
aon6424.pdf

AON6486
AON6486

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.8. Size:149K  aosemi
aon6426.pdf

AON6486
AON6486

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

 9.9. Size:301K  aosemi
aon6428.pdf

AON6486
AON6486

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.10. Size:305K  aosemi
aon6442.pdf

AON6486
AON6486

AON644240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6442 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 32Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.11. Size:384K  aosemi
aon6414al.pdf

AON6486
AON6486

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.12. Size:262K  aosemi
aon6440.pdf

AON6486
AON6486

AON644040V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 40VThe AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.13. Size:399K  aosemi
aon6452.pdf

AON6486
AON6486

AON6452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.14. Size:268K  aosemi
aon6414a.pdf

AON6486
AON6486

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.15. Size:158K  aosemi
aon6410.pdf

AON6486
AON6486

AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

 9.16. Size:267K  aosemi
aon6435.pdf

AON6486
AON6486

AON643530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON6435 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.17. Size:159K  aosemi
aon6404.pdf

AON6486
AON6486

AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

 9.18. Size:231K  aosemi
aon6403.pdf

AON6486
AON6486

AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.19. Size:273K  aosemi
aon6448.pdf

AON6486
AON6486

AON644880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.20. Size:226K  aosemi
aon6400.pdf

AON6486
AON6486

AON640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.21. Size:251K  aosemi
aon6454a.pdf

AON6486
AON6486

AON6454A150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 31Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.22. Size:156K  aosemi
aon6414.pdf

AON6486
AON6486

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.23. Size:268K  aosemi
aon6416.pdf

AON6486
AON6486

AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.24. Size:264K  aosemi
aon6444.pdf

AON6486
AON6486

AON644460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 60VThe AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.25. Size:262K  aosemi
aon6407.pdf

AON6486
AON6486

AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.26. Size:306K  aosemi
aon6418.pdf

AON6486
AON6486

AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.27. Size:189K  aosemi
aon6404a.pdf

AON6486
AON6486

AON6404A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6404A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.28. Size:245K  aosemi
aon6406.pdf

AON6486
AON6486

AON6406 30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)

 9.29. Size:239K  aosemi
aon6454.pdf

AON6486
AON6486

AON6454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.30. Size:262K  aosemi
aon6411.pdf

AON6486
AON6486

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.31. Size:155K  aosemi
aon6422.pdf

AON6486
AON6486

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

 9.32. Size:245K  aosemi
aon6405.pdf

AON6486
AON6486

AON640530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6405 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

 9.33. Size:151K  aosemi
aon6408.pdf

AON6486
AON6486

AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)

 9.34. Size:278K  aosemi
aon6413.pdf

AON6486
AON6486

AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.35. Size:874K  cn vbsemi
aon6405.pdf

AON6486
AON6486

AON6405www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf

Datasheet: AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 , AON6484 , MMIS60R580P , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , AON6512 , AON6516 .

 

 
Back to Top