AON6510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6510
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 46 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 32 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.2 V
Tiempo de elevación (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 915 pF
Resistencia drenaje-fuente RDS(on): 0.0044 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6510
AON6510 Datasheet (PDF)
1.1. aon6510.pdf 
Size:291K _aosemi
AON6510 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computi
4.1. aon6516.pdf Size:306K _aosemi
AON6516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co
4.2. aon6512.pdf Size:282K _aosemi
AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters
4.3. aon6514.pdf Size:295K _aosemi
AON6514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in
4.4. aon6518.pdf Size:293K _aosemi
AON6518 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.75mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
