AON6510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6510

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 46 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 32 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 915 pF

Resistencia drenaje-fuente RDS(on): 0.0044 Ohm

Empaquetado / Estuche: DFN5x6

Búsqueda de reemplazo de MOSFET AON6510

AON6510 Datasheet (PDF)

1.1. aon6510.pdf Size:291K _aosemi

AON6510 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computi

4.1. aon6518.pdf Size:293K _aosemi

AON6518 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.75mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

4.2. aon6516.pdf Size:306K _aosemi

AON6516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

4.3. aon6512.pdf Size:282K _aosemi

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

4.4. aon6514.pdf Size:295K _aosemi

AON6514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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