AON6510 Datasheet and Replacement
Type Designator: AON6510
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 915 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: DFN5X6
AON6510 substitution
AON6510 Datasheet (PDF)
aon6510.pdf

AON651030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf

AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf

AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6518.pdf

AON651830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6482 , AON6484 , AON6486 , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , IRFP250 , AON6512 , AON6516 , AON6518 , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 .
History: FDU044AN03L | 2SK888 | WMN30N80M3 | 2SJ605-Z | FQI6N15TU | SFF240J | BUZ83
Keywords - AON6510 MOSFET datasheet
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History: FDU044AN03L | 2SK888 | WMN30N80M3 | 2SJ605-Z | FQI6N15TU | SFF240J | BUZ83



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