AON6518 Todos los transistores

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AON6518 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6518

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 1530 pF

Resistencia drenaje-fuente RDS(on): 0.00175 Ohm

Empaquetado / Estuche: DFN5x6

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AON6518 Datasheet (PDF)

1.1. aon6518.pdf Size:293K _aosemi

AON6518
AON6518

AON6518 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.75mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC

4.1. aon6510.pdf Size:291K _aosemi

AON6518
AON6518

AON6510 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computi

4.2. aon6516.pdf Size:306K _aosemi

AON6518
AON6518

AON6516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

4.3. aon6512.pdf Size:282K _aosemi

AON6518
AON6518

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

4.4. aon6514.pdf Size:295K _aosemi

AON6518
AON6518

AON6514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

Otros transistores... AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , AON6512 , AON6516 , 2SK170 , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 , AON6532 , AON6536 , AON6538 .

 


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