AON6518 Datasheet and Replacement
Type Designator: AON6518
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1530 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm
Package: DFN5X6
AON6518 substitution
AON6518 Datasheet (PDF)
aon6518.pdf
AON651830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6510.pdf
AON651030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , AON6512 , AON6516 , IRFZ24N , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 , AON6532 , AON6536 , AON6538 .
History: AP4920GM-HF | PZ558EZ | AOB10T60P | OSG80R380PF | SI1013CX | ET6300 | UK3919
Keywords - AON6518 MOSFET datasheet
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History: AP4920GM-HF | PZ558EZ | AOB10T60P | OSG80R380PF | SI1013CX | ET6300 | UK3919
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MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
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