AON6526 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6526
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.8 nS
Cossⓘ - Capacitancia de salida: 526 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6526 MOSFET
AON6526 Datasheet (PDF)
aon6526.pdf

AON652630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6520.pdf

AON652030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6520 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6524.pdf

AON652430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
aon6528.pdf

AON652830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON6508 , AON6510 , AON6512 , AON6516 , AON6518 , AON6520 , AON6522 , AON6524 , STF13NM60N , AON6530 , AON6532 , AON6536 , AON6538 , AON6544 , AON6552 , AON6554 , AON6558 .
History: HYG025N06LS1C2 | QS8M13 | SM6F24NSFP | IRLU3410P | IPB180P04P4L-02 | SSF8205UH2 | CHM7401WGP
History: HYG025N06LS1C2 | QS8M13 | SM6F24NSFP | IRLU3410P | IPB180P04P4L-02 | SSF8205UH2 | CHM7401WGP



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