All MOSFET. AON6526 Datasheet

 

AON6526 Datasheet and Replacement


   Type Designator: AON6526
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 526 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6
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AON6526 Datasheet (PDF)

 ..1. Size:305K  aosemi
 aon6526.pdf pdf_icon

AON6526

AON652630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:248K  aosemi
 aon6520.pdf pdf_icon

AON6526

AON652030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6520 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.2. Size:456K  aosemi
 aon6524.pdf pdf_icon

AON6526

AON652430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:358K  aosemi
 aon6528.pdf pdf_icon

AON6526

AON652830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

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History: VBNC1303 | IRFS4010PBF

Keywords - AON6526 MOSFET datasheet

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