AON6536 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6536
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 35.5 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 55 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.5 V
Tiempo de elevación (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia drenaje-fuente RDS(on): 0.007 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6536
AON6536 Datasheet (PDF)
1.1. aon6536.pdf 
Size:327K _aosemi
AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide VDS 30V extremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55A and battery protection applications. RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS=4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested D
4.1. aon6530.pdf Size:288K _aosemi
AON6530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i
4.2. aon6532.pdf Size:312K _aosemi
AON6532 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.0mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i
4.3. aon6538.pdf Size:288K _aosemi
AON6538 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 75A • Low Gate Charge RDS(ON) (at VGS=10V) < 4mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in
4.4. aon6534.pdf Size:299K _aosemi
AON6534 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 8mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 12mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in C
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
