AON6536 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6536
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6536 MOSFET
AON6536 PDF Specs
aon6536.pdf
AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide VDS 30V extremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55A and battery protection applications. RDS(ON) (at VGS=10V) ... See More ⇒
aon6534.pdf
AON6534 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aon6530.pdf
AON6530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aon6532.pdf
AON6532 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Otros transistores... AON6516 , AON6518 , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 , AON6532 , 10N65 , AON6538 , AON6544 , AON6552 , AON6554 , AON6558 , AON6566 , AON6572 , AON6576 .
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