AON6536 MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

AON6536 Specs and Replacement

Type Designator: AON6536

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5X6

AON6536 substitution

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AON6536 datasheet

..1. Size:327K aosemi
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AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide VDS 30V extremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55A and battery protection applications. RDS(ON) (at VGS=10V) ... See More ⇒

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AON6534 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:288K aosemi
aon6530.pdf pdf_icon

AON6530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:312K aosemi
aon6532.pdf pdf_icon

AON6532 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒