AON6780 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6780
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 820 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6780 MOSFET
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AON6780 datasheet
aon6780.pdf
AON6780 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6786.pdf
AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6788.pdf
AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6782.pdf
AON6782 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Otros transistores... AON6594 , AON6596 , AON6752 , AON6754 , AON6756 , AON6758 , AON6760 , AON6774 , 7N60 , AON6782 , AON6810 , AON6812 , AON6816 , AON6850 , AON6884 , AON6906A , AON6908A .
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