AON6780 Datasheet and Replacement
Type Designator: AON6780
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 820 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DFN5X6
AON6780 substitution
AON6780 Datasheet (PDF)
aon6780.pdf

AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6786.pdf

AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6788.pdf

AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6782.pdf

AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Datasheet: AON6594 , AON6596 , AON6752 , AON6754 , AON6756 , AON6758 , AON6760 , AON6774 , MMIS60R580P , AON6782 , AON6810 , AON6812 , AON6816 , AON6850 , AON6884 , AON6906A , AON6908A .
History: MTP50P03HDLG | FDS7066N7 | EMH2314 | SM7508NSF | STD5NK60Z | SI4668DY | FIR150N06PG
Keywords - AON6780 MOSFET datasheet
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History: MTP50P03HDLG | FDS7066N7 | EMH2314 | SM7508NSF | STD5NK60Z | SI4668DY | FIR150N06PG



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