AON6812 Todos los transistores

 

AON6812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6812
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 746 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: DFN5X6BEP1

 Búsqueda de reemplazo de MOSFET AON6812

 

AON6812 Datasheet (PDF)

 ..1. Size:276K  aosemi
aon6812.pdf

AON6812 AON6812

AON6812AlphaMOS 30V Common Drain N-ChannelGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:282K  aosemi
aon6816.pdf

AON6812 AON6812

AON681630V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:299K  aosemi
aon6810.pdf

AON6812 AON6812

AON6810AlphaMOS 30V Common Drain N-Channel General Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:640K  1
aon6884.pdf

AON6812 AON6812

AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

 9.2. Size:261K  aosemi
aon6850.pdf

AON6812 AON6812

AON6850100V Dual N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28Atechnology that combines excellent RDS(ON) with low gate

 9.3. Size:244K  aosemi
aon6884.pdf

AON6812 AON6812

AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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