AON6812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6812
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 746 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: DFN5X6BEP1
Búsqueda de reemplazo de AON6812 MOSFET
AON6812 Datasheet (PDF)
aon6812.pdf
AON6812AlphaMOS 30V Common Drain N-ChannelGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)
aon6816.pdf
AON681630V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)
aon6810.pdf
AON6810AlphaMOS 30V Common Drain N-Channel General Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
aon6884.pdf
AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
Otros transistores... AON6754 , AON6756 , AON6758 , AON6760 , AON6774 , AON6780 , AON6782 , AON6810 , IRF830 , AON6816 , AON6850 , AON6884 , AON6906A , AON6908A , AON6910A , AON6912A , AON6918 .
History: P4404EDG | BL20N50-W | AON6906A | IPD30N03S2L-10 | P3606BD | P2003BDG | NCEA2309
History: P4404EDG | BL20N50-W | AON6906A | IPD30N03S2L-10 | P3606BD | P2003BDG | NCEA2309
Liste
Recientemente añadidas las descripciónes de los transistores:
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