Справочник MOSFET. AON6812

 

AON6812 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON6812
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 746 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: DFN5X6BEP1

 Аналог (замена) для AON6812

 

 

AON6812 Datasheet (PDF)

 ..1. Size:276K  aosemi
 aon6812.pdf

AON6812 AON6812

AON6812AlphaMOS 30V Common Drain N-ChannelGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:282K  aosemi
 aon6816.pdf

AON6812 AON6812

AON681630V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:299K  aosemi
 aon6810.pdf

AON6812 AON6812

AON6810AlphaMOS 30V Common Drain N-Channel General Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:640K  1
 aon6884.pdf

AON6812 AON6812

AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

 9.2. Size:261K  aosemi
 aon6850.pdf

AON6812 AON6812

AON6850100V Dual N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28Atechnology that combines excellent RDS(ON) with low gate

 9.3. Size:244K  aosemi
 aon6884.pdf

AON6812 AON6812

AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top