AON6850 Todos los transistores

 

AON6850 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6850

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: DFN5X6EP2

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AON6850 datasheet

 ..1. Size:261K  aosemi
 aon6850.pdf pdf_icon

AON6850

AON6850 100V Dual N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28A technology that combines excellent RDS(ON) with low gate

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 aon6884.pdf pdf_icon

AON6850

AON6884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34A all purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

 9.2. Size:276K  aosemi
 aon6812.pdf pdf_icon

AON6850

AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:282K  aosemi
 aon6816.pdf pdf_icon

AON6850

AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6758, AON6760, AON6774, AON6780, AON6782, AON6810, AON6812, AON6816, IRF9640, AON6884, AON6906A, AON6908A, AON6910A, AON6912A, AON6918, AON6920, AON6922

 

 

 

 

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