AON6850
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6850
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package: DFN5X6EP2
AON6850
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6850
Datasheet (PDF)
..1. Size:261K aosemi
aon6850.pdf
AON6850100V Dual N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28Atechnology that combines excellent RDS(ON) with low gate
9.1. Size:640K 1
aon6884.pdf
AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
9.2. Size:276K aosemi
aon6812.pdf
AON6812AlphaMOS 30V Common Drain N-ChannelGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:282K aosemi
aon6816.pdf
AON681630V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:244K aosemi
aon6884.pdf
AON688440V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6884 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34Aall purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
9.5. Size:299K aosemi
aon6810.pdf
AON6810AlphaMOS 30V Common Drain N-Channel General Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
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, IRFP432
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, IRFP440
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, IRFP250
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