AON6850 MOSFET Datasheet: N-Ch, 100V, 28A. Full specification with pinout and replacement list

AON6850 Specs and Replacement

Type Designator: AON6850

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: DFN5X6EP2

AON6850 substitution

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AON6850 datasheet

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AON6850 100V Dual N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6850 is fabricated with SDMOSTM trench ID (at VGS=10V) 28A technology that combines excellent RDS(ON) with low gate ... See More ⇒

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AON6884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34A all purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V) ... See More ⇒

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AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒