AON6908A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON6908A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31(78) W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20(12) V
   |Id|ⓘ - Corriente continua de drenaje: 46(80) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 9.5(6) nS
   Cossⓘ - Capacitancia de salida: 380(490) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089(0.0036) Ohm
   Paquete / Cubierta: DFN5X6B

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AON6908A Datasheet (PDF)

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aon6908a.pdf

AON6908A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)

7.1. Size:471K aosemi
aon6908.pdf

AON690830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

8.1. Size:562K aosemi
aon6906.pdf

AON690630V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906 is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is

8.2. Size:370K aosemi
aon6906a.pdf

AON6906A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RFM8P10 | SVF6N70MJG

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