AON6908A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6908A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31(78) W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20(12) V

|Id|ⓘ - Corriente continua de drenaje: 46(80) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.5(6) nS

Cossⓘ - Capacitancia de salida: 380(490) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0089(0.0036) Ohm

Encapsulados: DFN5X6B

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AON6908A datasheet

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AON6908A

AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)

 7.1. Size:471K  aosemi
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AON6908A

AON6908 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.1. Size:562K  aosemi
 aon6906.pdf pdf_icon

AON6908A

AON6906 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906 is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

 8.2. Size:370K  aosemi
 aon6906a.pdf pdf_icon

AON6908A

AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

MOSTRAR MÁS

Otros transistores... AON6780, AON6782, AON6810, AON6812, AON6816, AON6850, AON6884, AON6906A, SI2302, AON6910A, AON6912A, AON6918, AON6920, AON6922, AON6924, AON6926, AON6928